| PART |
Description |
Maker |
| 2N1047A |
GERMANIUM POWER TRANSISTORS
|
New Jersey Semiconductor
|
| NTE102A |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE[NTE Electronics]
|
| NTE135 NTE131 |
Germanium Complementary Transistors Audio Power Amplifier
|
NTE[NTE Electronics]
|
| AC188 |
Germanium Small Signal Transistors
|
GPD Optoelectronic Devices
|
| 2N187 2N190 2N191 |
Alloy Junction Germanium Transistors
|
Semitronics
|
| 2N2000 2N2001 |
(2N2000 / 2N2001) alloy-junction germanium transistors
|
ETC
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| AA143 |
Gold Bonded Germanium Diodes 0.04 A, GERMANIUM, SIGNAL DIODE, DO-7
Gold Bonded Germanium Diodes
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2N4232A 2N6313 2N6314 2M4233A 2M6312 2N4231A 2N423 |
POWER TRANSISTORS(5A,75W)
POWER TRANSISTORS(5A/75W)
POWER TRANSISTORS(5A /75W)
POWER TRANSISTORS(5A75W)
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| RTC6691 |
silicon-germanium (SiGe) power amplifier
|
RichWave
|
| UPC3236TK-E2 UPC3236TK-E2-A UPC3236TK |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
